Multiform Resistance Switching Effects in the Al/La[sub 0.7]Ca[sub 0.3]MnO[sub 3]/Pt Structure

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Keiji Shono et al.   Applied Physics Express

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications

(2008) Wen-Yuan Chang et al.   APPLIED PHYSICS LETTERS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Improvement of resistive switching property in a noncrystalline and low-resistance La0.7Ca0.3MnO3thin film by using an Ag–Al alloy electrode

(2008) Weidong Yu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE