Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO[sub 4] TFT Fabricated on Plastic Substrates

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Thickness Dependence of Gate Dielectric and Active Semiconductor on InGaZnO[sub 4] TFT Fabricated on Plastic Substrates
Authors
Keywords
-
Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 11, Issue 12, Pages H317
Publisher
The Electrochemical Society
Online
2008-10-15
DOI
10.1149/1.2978961
References
View 2 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.