Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 11, Issue 6, Pages J54-J56Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2902308
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Thin-film (Sr,Ba)(2)SiO4:Eu2+ phosphors were pulsed-laser deposited on quartz glass, sapphire, and Si wafers. The processing conditions were optimized to reduce substrate temperature during deposition and also to avoid high-temperature postdeposition annealing and reduction. In this study, the maximum processing temperature was reduced to 700 degrees C, which must be lowered even further to produce on-chip phosphor films. The exact composition of the film obtained under the optimum processing conditions was identified by Rietveld refinement analysis, and two-peak emission behavior was investigated based on the exact structure. (c) 2008 The Electrochemical Society.
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