Vacancies in Si Can Improve the Concentration-Dependent Lithiation Rate: Molecular Dynamics Studies of Lithiation Dynamics of Si Electrodes

Title
Vacancies in Si Can Improve the Concentration-Dependent Lithiation Rate: Molecular Dynamics Studies of Lithiation Dynamics of Si Electrodes
Authors
Keywords
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Journal
Journal of Physical Chemistry C
Volume 119, Issue 43, Pages 24265-24275
Publisher
American Chemical Society (ACS)
Online
2015-10-06
DOI
10.1021/acs.jpcc.5b06953

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