Journal
JOURNAL OF PHASE EQUILIBRIA AND DIFFUSION
Volume 36, Issue 2, Pages 99-109Publisher
SPRINGER
DOI: 10.1007/s11669-015-0364-8
Keywords
Arrhenius' equation; CdTe; compensation effect; impurities diffusion; Meyer-Neldel rule
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Funding
- Science@Technology Center of Ukraine [P406]
- U. S. Department of Energy
- DOE/NNSA MNN RD
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Understanding of self- and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D (0)exp(-Delta E (a)/kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D (0), and the activation energy, Delta E (a), of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.
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