4.1 Review

Complementary Metal Oxide Semiconductors-Microelectromechanical Systems Integration

Journal

DEFENCE SCIENCE JOURNAL
Volume 59, Issue 6, Pages 557-567

Publisher

DEFENCE SCIENTIFIC INFORMATION DOCUMENTATION CENTRE
DOI: 10.14429/dsj.59.1560

Keywords

CMOS; microelectromechanical system; MEMS; sensors; RF MEMS; integrated design; CMOS-MEMS integrated systems

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A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed.

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