Layered germanium tin antimony tellurides: element distribution, nanostructures and thermoelectric properties
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Title
Layered germanium tin antimony tellurides: element distribution, nanostructures and thermoelectric properties
Authors
Keywords
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Journal
DALTON TRANSACTIONS
Volume 43, Issue 27, Pages 10529-10540
Publisher
Royal Society of Chemistry (RSC)
Online
2014-02-13
DOI
10.1039/c4dt00336e
References
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Note: Only part of the references are listed.- Temperature dependent resonant X-ray diffraction of single-crystalline Ge2Sb2Te5
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- The Science and Technology of Phase Change Materials
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- Real Structure and Thermoelectric Properties of GeTe-Rich Germanium Antimony Tellurides
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- Elemental Distribution and Thermoelectric Properties of Layered Tellurides 39R-M0.067Sb0.667Te0.266 (M=Ge, Sn)
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- High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material
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- Effect of cadmium, silver, and tellurium doping on the properties of single crystals of the layered compounds PbBi4Te7 and PbSb2Te4
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- Atom distribution in SnSb2Te4 by resonant X-ray diffraction
- (2011) Oliver Oeckler et al. SOLID STATE SCIENCES
- Phase Change Materials: Challenges on the Path to a Universal Storage Device
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- Phase Change Materials and Their Application to Nonvolatile Memories
- (2009) Simone Raoux et al. CHEMICAL REVIEWS
- Structural characteristics of GeTe-rich GeTe–Sb2Te3 pseudobinary metastable crystals
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