Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Published 2015 View Full Article

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Title
Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride
Authors
Keywords
-
Journal
ACS Nano
Volume 9, Issue 9, Pages 8953-8959
Publisher
American Chemical Society (ACS)
Online
2015-08-12
DOI
10.1021/acsnano.5b02816

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