4.4 Article

Epitaxial perovskite oxide thin films on Ba(Ti,Zr)O3 substrates for strain-induced electric/magnetic property changes near room temperature

Journal

CURRENT APPLIED PHYSICS
Volume 14, Issue 3, Pages 251-253

Publisher

ELSEVIER
DOI: 10.1016/j.cap.2013.11.022

Keywords

Thin film; Thermal expansion-induced strain; Electric property; Magnetic property

Funding

  1. Basic Science Research Program through the National Research Foundation of Korea (NRF)
  2. Ministry of Education, Science and Technology [2012R1A1A2002536]
  3. National Research Foundation of Korea [2012R1A1A2002536] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We have reported the epitaxial growth and the electric/magnetic properties of SrRuO3 and (La0.67Sr0.33)MnO3 thin films on Ba(Ti0.925Zr0.075)O-3 substrates. The dielectric constant and thermal expansion of Ba(Ti0.925Zr0.075)O-3 exhibited hysteretic jumps at the structural transition temperatures. Near the rhombohedral to orthorhombic structural transition temperature of Ba(Ti0.925Zr0.075)O-3, which occurs at similar to 33 degrees C, we have observed a drastic jump of resistivity and magnetization of the thin films. These results suggest that epitaxial perovskite oxide thin films on Ba(Ti0.925Zr0.075)O-3 substrates should be quite useful for the strain-induced changes of physical properties near room temperature. (C) 2013 Elsevier B. V. All rights reserved.

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