Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator

Published 2011 View Full Article

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Title
Top-gate amorphous IGZO thin-film transistors with a SiO buffer layer inserted between active channel layer and gate insulator
Authors
Keywords
-
Journal
CURRENT APPLIED PHYSICS
Volume 12, Issue 1, Pages 228-232
Publisher
Elsevier BV
Online
2011-06-29
DOI
10.1016/j.cap.2011.06.006

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