Journal
CURRENT APPLIED PHYSICS
Volume 11, Issue 1, Pages 77-81Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2010.06.022
Keywords
GaN; Nanowires; Au catalyst; Au plus Ga nano-droplets; Ga predeposition; MOCVD
Funding
- Ministry of Education, Science and Technology [KRF-2008-314-D00249]
- Basic Research of the Korea Science and Engineering Foundation, Korean Government (MOEHRD) [NRL. R0A-2008-000-20031-0]
Ask authors/readers for more resources
Gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(111) substrate by metal-organic chemical vapor deposition (MOCVD). Here we adopted two different experimental procedures to grow GaN NWs namely, with and without Ga predeposition on Au-coated Si(111) substrate before annealing. Comparative studies based on the morphology and growth behavior of GaN NWs were performed by using Au catalyst and Au + Ga solid solution nano-droplets. The grown GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), cathodoluminescence (CL), high-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy. The nucleation of GaN NWs was explained in terms of Ga predeposition. As a result, we showed that the advantages of using the Au + Ga solid solution nano-droplets for growing GaN NWs. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available