Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes

High-efficiency light-emitting diode with air voids embedded in lateral epitaxially overgrown GaN using a metal mask

(2011) Chu-Young Cho et al.   OPTICS EXPRESS

GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures

(2010) Wei-Chih Lai et al.   APPLIED PHYSICS LETTERS

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

(2010) Pekka T. Törmä et al.   CRYSTENGCOMM

MQWs InGaN/GaN LED with embedded micro-mirror array in the epitaxial-lateral-overgrowth gallium nitride for light extraction enhancement

(2010) Chen-Yang Huang et al.   OPTICS EXPRESS

Growth and melting of silicon supported silver nanocluster films

(2009) S R Bhattacharyya et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Nanopatterned aluminum nitride template for high efficiency light-emitting diodes

(2009) Sang-Mook Kim et al.   OPTICS EXPRESS

Air-voids embedded high efficiency InGaN-light emitting diode

(2008) Eun-Hyun Park et al.   APPLIED PHYSICS LETTERS

Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template

(2008) C. H. Chiu et al.   APPLIED PHYSICS LETTERS