Journal
CRYSTENGCOMM
Volume 13, Issue 12, Pages 4097-4101Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c0ce00744g
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Funding
- National Natural Science Foundation of China [50972063, 50572041]
- Natural Science Foundation of Shandong Province [Y2007F64]
- Education Department in Shandong Province [J06A02]
- Tackling Key Program of Science and Technology in Shandong Province [2006GG2203014]
- Application Foundation Research Program of Qingdao [09-1-3-27-jch]
- Key Technology Major Research Plan in Qingdao [09-1-4-21-gx]
- Science and Technology Intensive Small-and-Medium-Sized Enterprises of Ministry of Science and Technology
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The single-crystalline cubic-silicon carbide (beta-SiC) nanowire (NW) arrays on a 6H-SiC substrate (0001) were synthesized via a simple chemical vapor reaction (CVR) approach at 1250 degrees C by using Ni as the catalyst. The obtained nanostructures were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM) and high-resolution transmission electron microscope (HRTEM). The results indicate that the obtained arrays are high purity beta-SiC single crystals aligned along the [111] direction. In order to explain the growth process of the beta-SiC nanowire arrays on the 6H-SiC substrate, a reasonable quasi-homogeneous substrate vapor-liquid-solid (VLS) growth mechanism is proposed.
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