Journal
CRYSTENGCOMM
Volume 12, Issue 10, Pages 3305-3309Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c002160a
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Funding
- National Natural Science Foundation of China [60776010]
- Science Foundation for Distinguished Young Scholars of Heilongjiang Province [JC200805]
- Natural Science Foundation of Heilongjiang [A2007-03, A200807, F200828]
- Education Bureau of Heilongjiang Province [11531225, 11531227]
- Project of Overseas Talent, Personnel Bureau, Heilongjiang Province
- Excellent Leader of Subjects, Bureau of Science and Technology of Harbin, Heilongjiang Province [2007RFXXG028]
- Graduate Students' Scientific Research Innovation Project of Heilongjiang Province [YJSCX2009-256HLJ]
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Hierarchical In2O3(ZnO)(10) superlattice nanostructures were controllably synthesized in high yield by a simple chemical vapor deposition method, at low temperature. Scanning electron microscopy and transmission electron microscopy observations showed that In2O3(ZnO)(10) superlattice platelets regularly arrayed along axial In2O3(ZnO)(10) superlattice nanowires. High-resolution transmission electron microscopy results demonstrated that the two adjacent In-O layers sandwich eleven layered wurtzite In/Zn-O layers. X-Ray diffraction data for In2O3(ZnO)(10) were obtained to fill the gap in the JCPDS database. A possible growth mechanism is suggested in terms of the Stranski-Krastanow growth mode of semiconductor quantum dots. Low-temperature synthesis of hierarchical In2O3(ZnO)(10) superlattice nanostructures is an important step toward fabricating highly densely integrated functional nanodevices.
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