Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 15, Issue 7, Pages 4883-4886Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.9827
Keywords
Graphene; Chemical Vapor Deposition; Chemical Doping
Categories
Funding
- NSF (ECCS) [0925988]
- National Center for Research Resources [5P20RR016480-12]
- National Institute of General Medical Sciences from NIH [8 P20 GM103451-12]
- DOE Center for Integrated Nanotechnologies user support program [U2008A061, RA2009B066]
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925988] Funding Source: National Science Foundation
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Simultaneous chemical vapor deposition (CVD) of graphene and in-situ phosphorous or boron doping of graphene was accomplished using Triphenylphosphine (TPP) and 4-Methoxyphenylboronic acid (4-MPBA). The TPP and 4-MPBA molecules were sublimated and supplied along with CH4 molecules during graphene growth at atmospheric pressure. The grown graphene samples were characterized using Raman spectroscopy. Phosphorous and boron presence in phosphorous and boron doped graphene was confirmed with Auger electron spectroscopy. The possibility of obtaining phosphorous and boron doped graphene using solid-source molecule precursors via CVD can lead to an easy and rapid production of modified large area graphene.
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