4.2 Article

Synthesis of CuIn1-xGaxSe2 Nanoparticles by Thermal Decomposition Method with Tunable Ga Content

Journal

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 15, Issue 11, Pages 8388-8394

Publisher

AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.11473

Keywords

CuIn1-xGaxSe2; Chalcopyrite; Thermal Decomposition

Funding

  1. ICyT [326/11]
  2. Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Ministry of Trade, Industry and Energy of the Korean government [20124010203280]
  3. MSIP (Ministry of Science, Ict and future Planning), South Korea [141S-6-3-0641]
  4. [CeMIE-Sol 207450/P26]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [20144030200580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  6. National Research Foundation of Korea [141S-6-3-0641] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Chalcopyrite CuIn1-xGaxSe2 (CIGS) nanoparticles were synthesized by mixing copper (I) chloride (CuCl), Indium (III) chloride (InCl3), gallium (III) chloride (GaCl3) and selenium (Se) in oleylamine (OLA) at 260 degrees C for 4 h under nitrogen atmosphere. The Ga/(In + Ga) ratio was tuned across the entire stoichiometric range from 0 to 1. X-ray diffraction analysis (XRD) revealed chalcopyrite crystal structure for samples prepared with x = 0, 0.3, 0.5, 0.7 and 1. The lattice parameters a and c decreased linearly with increasing Ga concentration which is consistent with Vegard's law. Raman spectra exhibited A(1) optical phonon vibrational mode for synthesized nanoparticles which gradually shifted to higher wavenumber with increasing Ga content. Field emission scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM) images showed irregular as well as hexagonal plate like morphologies in the size range of 100 to 400 nm. High-resolution transmission electron microscopy (HR-TEM) images showed well-defined lattice fringes and d-spacing correspond to (112) plane which gradually decreases with increasing Ga content. The material compositions of synthesized CIGS nanoparticles with x = 0, 0.3, 0.5, 0.7 and 1 were very close to the desired stoichiometry which was confirmed by energy dispersive X-ray analysis (EDAX). Ultra-violet visible near infrared (UV-VIS-NIR) absorption spectra of the synthesized CIGS nanoparticles revealed that the bandgap could be tuned over the range 1 to 1.7 eV by varying the Ga/(In+Ga) ratio.

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