Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 15, Issue 3, Pages 2490-2494Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2015.10269
Keywords
Culn(x)Ga(1-x)Se(2); Selenization; Solar Cell; Thin Film; Electronic Material
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Funding
- DGIST R&D Program of the Ministry of Education, Science and Technology of Korea [14-EN-03]
- Ministry of Science, ICT & Future Planning, Republic of Korea [14-EN-03] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Culn(x)Ga(1-x)Se(2) (GIGS) thin films were prepared by a solution-based CuInGa (CIG) precursor-selenization process. First, we investigated the effect of selenization temperature on the formation of polycrystalline CIGS and grain growth. The GIG precursor films were selenized using a two-step process to investigate the reaction of Se and GIG precursors during the formation of GIGS thin films. Depending on the temperature in the 1st step of the selenization process, the GIG precursor forms a different intermediate phase between the single phase to ternary phase such as Cu, Se, Cu Se, In Se, and CuInSe2. In addition, the intermediate phase exerts a significant influence on the final phase obtained after the 2nd step of the selenization process, particularly with regard to characteristics such as polycrystalline structure and grain growth in the GIGS films. The photoelectron conversion efficiency of devices prepared using GIGS thin films was approximately 1.59-2.75%.
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