Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 24, Issue 2, Pages 300-308Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2014.2384916
Keywords
Lamb wave; laterally vibrating resonators; piezoelectric; lithium niobate; quality factor; electro-mechanical coupling factor; TCF; wideband RF filtering
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Funding
- Defense Advanced Research Projects Agency through the Adaptive RF Technology Program
- National Science Foundation [ECCS-0335765]
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Commercial markets desire integrated multifrequency band-select duplexer and diplexer filters with a wide fractional bandwidth and steep roll-off to satisfy the ever-increasing demand for spectrum. In this paper, we discuss the fabrication and design of lithium niobate (LN) thin-film S-0 Lamb-wave resonators on a piezoelectric-on-piezoelectric platform. Filters using these resonators have the potential to fulfill all the above requirements. In particular, we demonstrated one-port high-order S0 Lamb-wave resonators with resonant frequencies from similar to 400 MHz to similar to 1 GHz on a black rotated y-136 cut LN thin film. The effective electromechanical coupling factor (k(eff)(2)) ranges from 7% to 12%, while the measured quality factor ranges from 600 to 3300. The highest k(eff)(2) x Q achieved on this chip is 194, significantly surpassing contour mode resonators manufactured in other technologies.
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