Electronic structure and optical properties of In2X2O7 (X=Si, Ge, Sn) from direct to indirect gap: An ab initio study

Title
Electronic structure and optical properties of In2X2O7 (X=Si, Ge, Sn) from direct to indirect gap: An ab initio study
Authors
Keywords
-
Journal
COMPUTATIONAL MATERIALS SCIENCE
Volume 78, Issue -, Pages 91-97
Publisher
Elsevier BV
Online
2013-06-20
DOI
10.1016/j.commatsci.2013.05.029

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