InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review

Title
InAs Nanowire Devices with Strong Gate Tunability: Fundamental Electron Transport Properties and Application Prospects: A Review
Authors
Keywords
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Journal
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
Volume 31, Issue 6, Pages 542-555
Publisher
Elsevier BV
Online
2015-04-29
DOI
10.1016/j.jmst.2015.01.006

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