Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications

Published 2012 View Full Article

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Title
Unipolar Resistive Switching Effects Based on Al/ZnO/P++-Si Diodes for Nonvolatile Memory Applications
Authors
Keywords
-
Journal
CHINESE PHYSICS LETTERS
Volume 29, Issue 8, Pages 087201
Publisher
IOP Publishing
Online
2012-08-09
DOI
10.1088/0256-307x/29/8/087201

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