Journal
CHINESE PHYSICS LETTERS
Volume 28, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/28/5/057301
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Funding
- National Basic Research Program of China [2011CB301902, 2011CB301903]
- National High Technology Research and Development Program of China [2007AA05Z429, 2008AA03A194]
- National Natural Science Foundation of China [60723002, 50706022, 60977022, 51002085]
- Beijing Natural Science Foundation [4091001]
- Industry, Academia and Research Combining
- Public Science and Technology Special Program of Shenzhen [08CXY-14]
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Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied. Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed. Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN, larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.
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