Journal
CHINESE PHYSICS LETTERS
Volume 27, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/27/12/124202
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Funding
- National Natural Science Foundation of China [10674031, 60978055]
- National Taiwan University [NSC-97-2221-E-002-026, NSC-98-2221-E-002-015-MY3]
- NSF of USA through the Center of Physics and Chemistry of Materials [HRD-0420516]
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Ultrafast third-order nonlinear optical response of bulk 6H-SiC undoped and doped with different nitrogen concentrations are investigated utilizing femtosecond Z-scan and optical Kerr effect (OKE) techniques at the wavelength of 800 nm. The Z-scan measurement shows that the third-order nonlinear optical susceptibilities of the doped samples are improved in comparison to the intrinsic sample. The OKE results additionally reveal that the in-stantaneous nonlinear optical response of the samples can be ascribed to the distortion of the electron cloud. The ultrafast transient spectroscopic measurements with the one-color and two-color pump-probe techniques demonstrate that the ultrafast recovery process in subpicosecond domain is induced by two-photon absorption process, while the slow relaxation component reflects the carrier dynamics of the excited electrons.
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