Journal
CHINESE PHYSICS LETTERS
Volume 27, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0256-307X/27/10/107304
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Funding
- NPU Foundation for Fundamental Research [NPU-FFR-JC200821, JC201048]
- National Natural Science Foundation of China [50702046]
- NWPU
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An Al-doped ZnO/p-Si heterojunction is fabricated by a laser molecular beam epitaxy technique. The abnormally high ideality factors (n >> 2) of the prepared heterojunction are observed in the interim bias voltage range. A theoretical model is proposed to understand the much higher ideality factor of the special heterojunction diode. The ZnO:Al film shows metal-like conductivity with the electrical resistivity about 6.56 x 10(-4) Omega.cm at room temperature. The temperature dependence of the photovoltage indicates that the photovoltaic effect of the Al-doped ZnO based heterojunction can be changed by the intrinsic metal-semiconductor transition at 120 K.
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