Effect of Ozone on the Stability of Solution-Processed Anthradithiophene-Based Organic Field-Effect Transistors

We have investigated the degradation effects of ozone exposure on organic field-effect transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene as the organic semiconducting channel layer, as well as on thin films of this widely used, high-mobility, small molecule semiconductor. Electrical I-V measurements showed a loss of transistor characteristic behavior. We present H-1 Nuclear Magnetic Resonance (NMR) spectroscopy results as well as Xray Photoemission Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) spectroscopy measurements showing the oxidation of the parent molecule, from which we suggest various possible reaction paths.