Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors

Published 2011 View Full Article

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Title
Tl2Hg3Q4(Q = S, Se, and Te): High-Density, Wide-Band-Gap Semiconductors
Authors
Keywords
-
Journal
CHEMISTRY OF MATERIALS
Volume 23, Issue 19, Pages 4375-4383
Publisher
American Chemical Society (ACS)
Online
2011-10-04
DOI
10.1021/cm2019857

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