High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives

Published 2008 View Full Article

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Title
High Performance n-Type Field-Effect Transistors Based on Indenofluorenedione and Diindenopyrazinedione Derivatives
Authors
Keywords
-
Journal
CHEMISTRY OF MATERIALS
Volume 20, Issue 8, Pages 2615-2617
Publisher
American Chemical Society (ACS)
Online
2008-03-20
DOI
10.1021/cm800366b

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