Journal
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
Volume 30, Issue 3, Pages 509-512Publisher
HIGHER EDUCATION PRESS
DOI: 10.1007/s40242-014-3497-0
Keywords
Boron-doped ZnO; Sol-gel; Transparent conductive oxide
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Funding
- National Natural Science Foundation of China [51002018, 51302024]
- Program for Liaoning Excellent Talents in University, China [LJQ20122038]
- Higher Specialized Research Fund for the Doctoral Program of China [20122124110004]
- Dalian Science and Technology Plan Project, China [2010J21DW008]
- Qinghai Provincial Science and Technology Project, China [2012-Z-701]
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Transparent conductive boron-doped ZnO thin films were prepared by sol-gel spin coating method. The effect of doped boron concentration on the properties of the films was systematically discussed. The films were characterized by X-ray diffraction, atomic force microscopy, spectrophotometry, and Hall effect measurement system. All the doped and undoped ZnO films were of a single hexagonal structure, and showed a preferred orientation of (002). The particle size and surface roughness of the films decreased with increased doped boron concentration. All the films exhibited an average transmittance of approximate 90% in visible-light region and an energy gap of about 3.3 eV. The maximum carrier concentration, the highest carrier mobility and the lowest resistivity were observed at a doped boron concentration of 0.5%(molar fraction). Based on these results, we suggested that the saturation concentration of doped boron in ZnO film is 0.5%(molar fraction).
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