Journal
CHEMICAL PHYSICS LETTERS
Volume 613, Issue -, Pages 100-103Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2014.08.071
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Funding
- National Nature Science Foundation of China [51372209]
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Resistive switching random access memory (RRAM) is considered as a promising candidate for the next generation of non-volatile memory. Herein single-crystalline BiCoO3 microribbons with width of 2 mu m and length of several microns were prepared by a hydrothermal process. We demonstrate good bipolar resistive switching behavior based on multiferroic BiCoO3 microribbons, which displays a low operation voltage (<2V) and long data retention (over 5 months). (C) 2014 Elsevier B.V. All rights reserved.
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