Journal
CHEMICAL PHYSICS LETTERS
Volume 554, Issue -, Pages 172-176Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cplett.2012.10.045
Keywords
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Funding
- National Natural Science Foundation of China [11104115]
- Natural Science Foundation of Shandong Province of China [ZR2009AL004]
- Doctoral Foundation of University of Jinan, China [XBS1004]
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By applying nonequilibrium Green's function formalism in combination with density functional theory, we have investigated the electronic transport properties of armchair graphene nanoribbon devices with periodic nitrogen-doping. Giant negative differential resistance behaviors with peak-to-valley ratio up to the order of 10(5) can be obtained in the mV bias regime by tuning the position and the concentration of the dopants. The negative differential resistance behavior is understood in terms of the evolution of the transmission spectrum and band structures with applied bias combined with the symmetry analyses of the Bloch wave functions of the corresponding subbands. (C) 2012 Elsevier B.V. All rights reserved.
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