4.7 Article

Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities

Journal

CHEMICAL COMMUNICATIONS
Volume -, Issue 34, Pages 5124-5126

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/b908361h

Keywords

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Funding

  1. Nano/Bio Science & Technology Program of MEST [2005-01325]
  2. KOSEF through EPB center [R11-2008-052-02000]
  3. KOSEF [2008-04306, 2007-8-1158]
  4. Korean Research Foundation [MOEHRD, KRF-2005-005-J13103)]
  5. World Class University (WCU) program through the KSEF [R31-2008-000-10059-0]

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Liquid GeCl4 precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl4, plays a critical role for the successful formation of Ge NWs.

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