4.7 Article

Investigation and characterization on crystal structure and enhanced microwave dielectric properties of non-stoichiometric Li3+xMg2NbO6 ceramics

Journal

CERAMICS INTERNATIONAL
Volume 44, Issue 16, Pages 20539-20544

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2018.08.051

Keywords

Li3+xMg2NbO6; Structural characteristics; Millimeter-wave applications

Funding

  1. National Key Research and Development Plan [2016YFA0300801, 2017YFB0406300]
  2. National Natural Science Foundation of China [51402041, 51602036, 51672036]
  3. Scientific Research Launch Foundation of UESTC [ZYGX2016KYQD092]
  4. National High-Tech Research and Development Program of China [2015AA034102]
  5. Sichuan Key Research Projects [2017GZ0408, 2017GZ0415]
  6. Guizhou Province Key RD Program [2016-3011]
  7. Science and Technology Department of Sichuan Province [2014GZ0015]

Ask authors/readers for more resources

Non-stoichiometric Li3+xMg2NbO6 (x = 0 - 0.08) microwave dielectric ceramics with ultra-low loss were synthesized through the solid-state reaction process. The effects of additional lithium contents on the microstructure, sintering behavior, structural characteristics and microwave dielectric properties were studied detailedly. Based on Rietveld refinement, the relation between crystal structure and microwave dielectric properties was investigated according to the structural characteristics such as the polarizability, packing fraction and NbO6 octahedron distortion. The epsilon(r) depended on the polarizability. The Q x f was determined by the average grain size and packing fraction. Additionally, the NbO6 octahedron distortion affected the tau(f) values. Particularly, Li3+xMg2NbO6 (x = 0.04) composition possessed extraordinarily excellent microwave dielectric properties: epsilon(r) = 15.8, Q x f = 150,000 GHz (9.85 GHz), tau(f) = - 29 ppm/degrees C, which made the ceramics as promising candidates for millimeter-wave applications.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Nanoscience & Nanotechnology

Enhancement of Low-k Spin-Wave Transmission Efficiency with a Record-High Group Velocity in YIG/Nonmagnetic Metal Heterojunctions

Jiapeng Xu, Zhimin Liao, Qi Wang, Bo Liu, Xiaoli Tang, Zhiyong Zhong, Lei Zhang, Yuanjing Zhang, Huaiwu Zhang, Lichuan Jin

Summary: This study experimentally demonstrates that the transmission efficiency of low-k spin waves can be enhanced through surface metallization of yttrium iron garnet (YIG), resulting in increased group velocity and low spin-pumping efficiency. The competition between spin-pumping effects and the introduction of enhanced group velocity by metal decoration describes the essence of partial signal enhancement in the spin-wave transmission spectrum. The work provides a practical way to achieve spin-wave manipulation and low-loss transmission.

ADVANCED ELECTRONIC MATERIALS (2023)

Article Chemistry, Physical

Relationship between structure and properties of microwave dielectric ceramic Li(1+x)2MgTi3O8 based on Li non-stoichiometry

Kui Liu, Cheng Liu, Jie Li, Lichuan Jin, Huaiwu Zhang

Summary: Li(1+x)2MgTi3O8 ceramics with Li non-stoichiometric ratios were prepared to inhibit Li volatilization. The effects of Li non-stoichiometric ratios on the sintering behavior, crystal structure, microscopic morphology, Raman vibrations, electron density, and dielectric properties were investigated. The Li(1+0.06)2MgTi3O8 ceramics demonstrated the best dielectric properties with er = 26.33, Q x f = 69 435 GHz (@6.87 GHz, 54% improvement), Tf = 2.95 x 10-6 degrees C-1. The improved ceramics have potential applications in microwave communication technology.

JOURNAL OF MATERIOMICS (2023)

Article Chemistry, Physical

Micromorphology and uniaxial magnetic anisotropy of oblique-sputtered Ni80Fe20 films on periodically rippled Al2O3 substrates

Xu Xu, Haoyang Huang, Lichuan Jin, Tianlong Wen, Yulong Liao, Xiaoli Tang, Yuanxun Li, Zhiyong Zhong

Summary: Ni80Fe20 (NiFe) films were deposited on periodically rippled Al2O3 substrates by two different template oblique angle deposition (OAD) processes at various oblique deposition angles alpha (0 degrees <= alpha <= 60 degrees). The disparate in-plane uniaxial magnetic anisotropy (UMA) caused by the two template deposition processes of films was revealed by magneto-optical Kerr effect (MOKE) loops and ferromagnetic resonance (FMR) measurements. The analysis of Transmission electron microscopy images indicated that this was related to the different micromorphology of the films due to the two template deposition processes. The angle between substrates' ripple direction and the material flow incident direction would strongly influence the micromorphology and the induced in-plane UMA field of films.

SURFACES AND INTERFACES (2023)

Article Materials Science, Multidisciplinary

Ultra-high Quality Factor of (Zn2/3Nb1/3)3+ Co-substitution MgAl2O4 Microwave Dielectric Ceramics

Cong Qi, Xizhi Yang, Yuanming Lai, Weiping Gong, Fangyi Huang, Xiao Li, Jun Yin, Gang Jiang, Chongsheng Wu, Hua Su

Summary: The nominal compositions of MgAl2-x(Zn2/3Nb1/3)(x)O-4 ceramics were synthesized using a solid-phase reaction method. It was found that the addition of Mg/ZnAl2O4 solid solution and second-phase Mg4Nb2O9 greatly improved the microwave dielectric properties of the samples. Furthermore, the second phase, ionic polarizability, and relative density influenced the dielectric constant (epsilon(r)) value. The quality factor (Qf) value exhibited a maximum at x = 0.40, and the temperature coefficient of the resonant frequency (tau(f)) value was negatively correlated with the B-site bond value. The ceramic with the nominal composition MgAl1.6(Zn2/3Nb1/3)(0.4)O-4 showed good microwave dielectric properties: epsilon(r) = 9.06, ultrahigh Qf = 563 000 GHz, and tau(f) = -45 ppm degrees C-1.

ADVANCED ENGINEERING MATERIALS (2023)

Article Chemistry, Physical

Microstructure and gyromagnetic properties of low-sintered M-type barium hexagonal ferrite with various Ga3+ions substitutions

Xueying Wang, Yida Lei, Liang Shi, Jie Li, Lichuan Jin, Yulong Liao, Kui Liu, Huaiwu Zhang

Summary: The adjustment of crystal structures and properties by ion substitution has gained increasing interest in recent years for solving issues in LTCC microwave device preparation. In this study, Fe3+ ions were substituted in low-temperature sintered BaFe12O19, and the changes in microstructures, dielectric characteristics, and magnetic properties were examined. The results showed significant changes in the crystal lattice, dielectric properties, and magnetic parameters of BaM after the substitution of Ga3+ ions.

JOURNAL OF ALLOYS AND COMPOUNDS (2023)

Article Engineering, Electrical & Electronic

Controlled Growth of Semiconductor Alloy/Ferromagnetic Insulator (GeBi/Bi:Thulium Iron Garnet (TmIG)) Spin Heterojunction and Development of Quantum Logic Device

Shuaicheng Liu, Lichuan Jin, Qinghui Yang, Xiangrong Wang, Dainan Zhang, Huaiwu Zhang

Summary: This study reports a Ge1-x Bi x / Bi: thulium iron garnet (TmIG) spin heterojunction, which enhances the spin-orbit coupling (SOC) strength and improves the abnormal spin Hall effect (ASHE) and the spin Hall magnetoresistance (R (H)) switch characteristics by using Ge1-x Bi x and Bi:TmIG thin films.

ACS APPLIED ELECTRONIC MATERIALS (2023)

Article Physics, Applied

Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt

Zijin Lin, Xinkai Xu, Lei Zhang, Junwen Wei, Zhiyong Zhong, Xiaoli Tang, Lichuan Jin

Summary: This study successfully enhanced the spin Hall angle by introducing dielectric material SrTiO3 into Pt. Theoretical analysis revealed that the enhancement of spin Hall angle is attributed to the complementary interplay between intrinsic mechanism from strong spin-orbit coupling in Pt and extrinsic mechanism from side-jump scattering caused by dielectric impurities. This work provides an effective strategy for fabricating low-power spin-torque devices with high-performance spin Hall materials.

APPLIED PHYSICS LETTERS (2023)

Article Materials Science, Ceramics

Crystal structure and ultra-high quality factor of MgTi1-x(Co1/3Nb2/3)xO3 solid-solution microwave ceramics

Fanqiang Lin, Yuanming Lai, Baoyang Li, Yuanxun Li, Weiping Gong, Qin Zhang, Mingjun Xie, Chongsheng Wu

Summary: MgTi1-x(Co1/3Nb2/3)(x)O-3 ceramics were prepared by a solid-state reaction method. The crystal structure, grain growth, dielectric properties, and temperature coefficient of resonance frequency were investigated. It was found that the type and content of ions have an influence on the solubility of phases, formation of secondary phase, and grain growth. The impact of TiO6 octahedral distortion and ion polarizability on dielectric properties and temperature coefficient of resonance frequency were systematically discussed.

CERAMICS INTERNATIONAL (2023)

Article Materials Science, Ceramics

Ultra-high quality factor of transparent Al2O3 ceramics fabricated by vacuum sintering and post hot isostatic pressing

Jun Yin, Xiao Li, Yuanming Lai, Xi Zhang, Shengquan Yu, Yongzhi Luo

Summary: Transparent polycrystalline Al2O3 (PCA) ceramics with high transmittance in the visible and infrared bands were prepared by hot isostatic pressing. The transmittance in the visible light region was significantly improved by the HIP method. The pure Al2O3 ceramics prepared using the same process showed a high quality factor and are potential candidates for multilayer electronic devices.

CERAMICS INTERNATIONAL (2023)

Article Chemistry, Physical

Aluminum doping hexagonal barium ferrite films with large perpendicular magnetic anisotropy and high remanence ratio

Yaning Lin, Lichuan Jin, Linling Li, Hui Zheng, Huaiwu Zhang

Summary: Aluminum-doped hexagonal barium ferrite film with high perpendicular magnetic anisotropy (PMA) and remanence ratio was prepared by post-annealing at high temperature on Al2O3 substrate. The crystal structure measurements showed improved crystallinity and orientation after high temperature post-annealing, while diffusion of Al ions from the Al2O3 substrate into the ferrite film occurred at 1100 degrees C annealing temperature. The diffusion phenomenon was confirmed by the distribution of elements in the cross-section, resulting in a decrease in saturation magnetization and an increase in coercivity and remanence ratio. A hexagonal barium ferrite film with large PMA field, relatively small FMR linewidth, and high remanence ratio was obtained by annealing the film at 1100 degrees C, showing potential for application in self-biased microwave devices.

CHEMICAL PHYSICS LETTERS (2023)

Article Materials Science, Multidisciplinary

Anomalous and inverse spin Hall effects in Pt1-xBix/ (YLuBiCa)3(FeGa)5O12 heterojunction

Dainan Zhang, Zhu Tao, Lichuan Jin, Qinghui Yang, Qiang Li, Huaiwu Zhang

Summary: A garnet film with spatial magnetic moment distribution was grown on a gadolinium gallium garnet wafer (111) crystal plane by adjusting growth parameters and ion substitution. A spin heterojunction Pt1-xBix/(YLuBiCa)3(FeGa)5O12 with both ISHE and ASHE effects was designed and fabricated. The spatial magnetic moment distribution of the heterojunction was found, providing a foundation for spin injection in multiple directions.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2023)

Article Materials Science, Multidisciplinary

The Giant Inverse Spin Hall Effect in Semiconductor Alloy/Ferromagnetic Insulator (Ge1-x Bi x /YIG) Spin Heterojunction

Youbin Zheng, Dainan Zhang, Lichuan Jin, Yulong Liao, Yiheng Rao, Qinghui Yang, Xiangrong Wang, Huaiwu Zhang

Summary: A Ge1-x Bix alloy film was grown into a GeBi/yttrium iron garnet (YIG) spin heterojunction with a ferromagnetic insulator Y(3)Fe(5)O(12) garnet film wafer for the first time, and it was found that regulating the Bi ions content and enhancing the spin-orbit torque (SOT) can control the signal voltage amplitude, bandwidth, and waveform of the inverse spin Hall effect (ISHE). The Bi doping not only changes the electron concentration and mixing conductance of the GeBi/YIG bilayer but also increases the SOT between GeBi film and YIG film, thereby driving domain superfast reversal and enhancing the ISHE. Our research shows that the Ge1-x Bix/YIG (x = 11.6-22.7%) spin heterojunction is one of the best choices for future spin wave devices.

ACS MATERIALS LETTERS (2023)

Article Chemistry, Physical

Terahertz Spin Current Pulses in Antiferromagnetic Oxide: The Role of Vacancy-Induced Ferromagnetism

Lei Zhang, Huaiwu Zhang, Dainan Zhang, Yuanpeng Li, Tianlong Wen, Zhiyong Zhong, Lichuan Jin

Summary: Antiferromagnetic oxides have unique properties in spintronics and are affected by crystal lattice defects. The role of vacancy-induced ferromagnetism on terahertz spin current in antiferromagnetic nickel oxide thin films is investigated. The results show that nickel vacancies break the antiferromagnetic exchange coupling and lead to the coexistence of antiferromagnetism and ferromagnetism in NiO thin films. The enhancement of terahertz radiation in NiO thin films with the strongest ferromagnetism is significant. The findings highlight the importance of defects in antiferromagnetic spintronics in the terahertz field.

SMALL STRUCTURES (2023)

Article Materials Science, Ceramics

Improved room-temperature magnetoelectric coupling properties for multiferroic Z-type hexaferrites

Fanqiang Lin, Chongsheng Wu, Qisheng Yin, Yuanming Lai, Yingli Liu

Summary: In this study, the effect of Ba substitution on the spiral magnetic structure and magnetoelectric effect in polycrystalline Z-type hexaferrites was systematically investigated. The results showed that Ba substitution significantly improved the magnetoelectric coupling coefficient and extended the magnetic field range for the appearance of magnetoelectric signals. These improvements were attributed to the decrease of Fe-O-Fe bond angle, reduction of cone angle in the transverse conical spin structure, and change in the distribution of magnetic Co ions caused by Ba substitution.

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY (2024)

Article Materials Science, Ceramics

Phase evolution and microware dielectric properties of high-entropy spinel-type (Mg0.2Co0.2Ni0.2Li0.4Zn0.2)Al2O4 ceramics

Mingjun Xie, Xiao Li, Yuanming Lai, Cong Qi, Jun Yin, Weiping Gong, Yuanxun Li, Qian Liu, Chongsheng Wu

Summary: “In this study, high-entropy spinel-type ceramics were synthesized and their microwave dielectric properties were investigated. The high-entropy ceramics exhibited good dielectric performance, which was influenced by factors such as sintering temperature, lattice distortion, and grain size.”

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY (2024)

No Data Available