4.7 Article

Effects of annealing temperature on the photocatalytic activity of N-doped TiO2 thin films

Journal

CERAMICS INTERNATIONAL
Volume 38, Issue 1, Pages 195-200

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2011.05.160

Keywords

N-TiO2 film; RF sputtering; Annealing; Photocatalysis

Funding

  1. National Council of Republic of China (Taiwan) [NSC NSC94-2216-E-239-003]

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The effects of annealing temperature on the photocatalytic activity of nitrogen-doped (N-doped) titanium oxide (TiO2) thin films deposited on soda-lime-silica slide glass by radio frequency (RF) magnetron sputtering have been studied. Glancing incident X-ray diffraction (GIAXRD), Raman spectrum, scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectra were utilized to characterize the N-doped TiO2 thin films with and without annealing treatment. GIAXRD and Raman results show as-deposited N-doped TiO2 thin films to be nearly amorphous and that the rutile and anatase phases coexisted when the N-doped TiO2 thin films were annealed at 623 and 823 K for 1 h, respectively. SEM microstructure shows uniformly close packed and nearly round particles with a size of about 10 nm which are on the slide glass surface for TiO2 thin films annealed at 623 K for 1 h. AFM image shows the lowest surface roughness for the N-doped TiO2 thin films annealed at 623 K for 1 h. The N-doped TiO2 thin films annealed at 623 K for 1 h exhibit the best photocatalytic activity, with a rate constant (k(a)) of about 0.0034 h(-1). (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

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