Journal
CERAMICS INTERNATIONAL
Volume 38, Issue 3, Pages 2583-2587Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2011.10.021
Keywords
Pb(Zr,Ti)O-3; Thin Film; Fatigue mechanism
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Funding
- National Natural Science Foundation of China [51102173]
- Sichuan University [2082204144033]
- National University of Singapore
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The dependence of the fatigue behavior on driving electric fields and measurement frequencies of Pb(Zr0.2Ti0.8)O-3 thin films with a PbOx buffer layer were systematically investigated. Its fatigue endurance degraded with increasing driving electric fields at a fixed frequency of 50 kHz and decreasing frequencies at a fixed electric field of similar to 259 kV/cm. The dielectric constant as a function of switching cycles, which is in agreement with the polarization fatigue, confirms that the local phase decomposition caused by the switching-induced charge injection largely dominates the fatigue behavior in Pb(Zr0.20Ti0.80)O-3, together with the domain-wall pinning by the point defect agglomeration. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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