Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
Authors
Keywords
A3. Thin film, A3. Molecular beam epitaxy, B2. Semiconducting gallium arsenide, B2. Semiconducting III-V materials, B2. Semiconducting silicon
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 425, Issue -, Pages 268-273
Publisher
Elsevier BV
Online
2015-02-10
DOI
10.1016/j.jcrysgro.2015.02.003

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.