A novel MOCVD reactor for growth of high-quality GaN-related LED layers

Published 2015 View Full Article

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Title
A novel MOCVD reactor for growth of high-quality GaN-related LED layers
Authors
Keywords
A1. Nanostructures, A1. Nucleation, A3. Metalorganic chemical vapor deposition, B1. Gallium nitride, B3. Light emitting diodes
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 415, Issue -, Pages 72-77
Publisher
Elsevier BV
Online
2015-01-08
DOI
10.1016/j.jcrysgro.2014.12.038

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