Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer

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Title
Improved output power of GaN-based ultraviolet light-emitting diodes with sputtered AlN nucleation layer
Authors
Keywords
A3. Metalorganic chemical vapor deposition, A3. Quantum wells, B1. Nitride, B2. Semiconductor III–V materials, B3. Light emitting diode
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 414, Issue -, Pages 258-262
Publisher
Elsevier BV
Online
2014-12-03
DOI
10.1016/j.jcrysgro.2014.10.013

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