Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

Published 2010 View Full Article

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Title
Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator
Authors
Keywords
-
Journal
BRAZILIAN JOURNAL OF PHYSICS
Volume 40, Issue 3, Pages 357-360
Publisher
FapUNIFESP (SciELO)
Online
2010-09-23
DOI
10.1590/s0103-97332010000300019

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