4.8 Article

Fe-Cr-Al Containing Oxide Semiconductors as Potential Solar Water-Splitting Materials

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 8, Pages 4883-4889

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/am508946e

Keywords

solar water splitting photoelectrochernistry; materials library; scanning droplet cell; high-throughput characterization; photocurrent

Funding

  1. DFG [SPP1613, Schu929/12-1, LU1175/10-1]
  2. International Max Planck Research School for Surface and Interface Engineering (IMPRS-SurMat)
  3. Division of Chemical Sciences, Geosciences, and Biosciences, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-FG02-05ER15750]

Ask authors/readers for more resources

A high-throughput thin film materials library for Fe-Cr-Al-O was obtained by reactive magnetron cosputtering and analyzed with automated EDX and XRD to elucidate compositional and structural properties. An automated optical scanning droplet cell was then used to perform photoelectrochemical measurements of 289 compositions on the library, including electrochemical stability, potentiodynamic photocurrents and photocurrent spectroscopy. The photocurrent onset and open circuit potentials of two semiconductor compositions (n-type semiconducting: Fe51Cr47Al2Ox, p-type semiconducting Fe36.5Cr55.5Al8Ox) are favorable for water splitting. Cathodic photocurrents are observed at 1.0 V vs RHE for the p-type material exhibiting an open circuit potential of 0.85 V vs RHE. The n-type material shows an onset of photocurrents at 0.75 V and an open circuit potential of 0.6 V. The p-type material showed a bandgap of 1.55 eV, while the n-type material showed a bandgap of 1.97 eV.

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