Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

Application of the level-set method to the analysis of an evolving microstructure

(2014) C.-L. Park et al.   COMPUTATIONAL MATERIALS SCIENCE

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy

(2014) L. K. Lee et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy

(2012) L.K. Aagesen et al.   JOURNAL OF CRYSTAL GROWTH

Extended smoothed boundary method for solving partial differential equations with general boundary conditions on complex boundaries

(2012) Hui-Chia Yu et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN

(2011) Qian Sun et al.   JOURNAL OF APPLIED PHYSICS

III-nitride nanopyramid light emitting diodes grown by organometallic vapor phase epitaxy

(2010) Isaac H. Wildeson et al.   JOURNAL OF APPLIED PHYSICS

Selective area epitaxy of InGaN quantum well triangular microrings with a single type of sidewall facets

(2010) Wen Feng et al.   JOURNAL OF CRYSTAL GROWTH

Simulation of coarsening in three-phase solid oxide fuel cell anodes

(2010) Hsun-Yi Chen et al.   JOURNAL OF POWER SOURCES

GaInN-based LED structures on selectively grown semi-polar crystal facets

(2010) Ferdinand Scholz et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Diverse facets of InGaN quantum well microrings grown by selective area epitaxy

(2009) Wen Feng et al.   JOURNAL OF APPLIED PHYSICS

Theoretical prediction of GaN nanostructure equilibrium and nonequilibrium shapes

(2009) Vibhu Jindal et al.   JOURNAL OF APPLIED PHYSICS

Analysis of mass transport mechanism in InGaN epitaxy on ridge shaped selective area growth GaN by metal organic chemical vapor deposition

(2008) H. Fang et al.   JOURNAL OF APPLIED PHYSICS

Effect of impurity incorporation on emission wavelength in cathodoluminescence spectrum image study of GaN pyramids grown by selective area epitaxy

(2008) D. Y. Song et al.   JOURNAL OF APPLIED PHYSICS

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

(2008) W. Feng et al.   JOURNAL OF APPLIED PHYSICS

Understanding nonpolar GaN growth through kinetic Wulff plots

(2008) Qian Sun et al.   JOURNAL OF APPLIED PHYSICS