Journal
JOURNAL OF APPLIED PHYSICS
Volume 118, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4931662
Keywords
-
Categories
Funding
- Semiconductor Research Corporation through Texas Analog Center of Excellence [1836.145]
- National Science Foundation [ECCS-1403421]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1403421] Funding Source: National Science Foundation
Ask authors/readers for more resources
Introducing quantum transport into silicon transistors in a manner compatible with industrial fabrication has the potential to transform the performance horizons of large scale integrated silicon devices and circuits. Explicit quantum transport as evidenced by negative differential transconductances (NDTCs) has been observed in a set of quantum well (QW) transistors fabricated using industrial silicon complementary metal-oxide-semiconductor processing. Detailed gate length and temperature dependence characteristics of the NDTCs in these devices have been measured. The QW potential was formed via lateral ion implantation doping on a commercial 45 nm technology node process line, and measurements of the transfer characteristics show NDTCs up to room temperature. Gate length dependence of NDTCs shows a correlation of the interface channel length with the number of NDTCs formed as well as with the gate voltage (VG) spacing between NDTCs. The VG spacing between multiple NDTCs suggests a quasi-parabolic QW potential profile. The temperature dependence is consistent with partial freeze-out of carrier concentration against a degenerately doped background. (C) 2015 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available