Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 631, Issue -, Pages 178-182Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.12.253
Keywords
Cu2ZnSnS4 (CZTS) thin films; Cu2ZnSn(S,Se)(4) (CZTSSe) thin films; Single-step electrodeposition; Thin-film solar cells
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Funding
- Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant - Korea government Ministry of Knowledge Economy [20124010203180]
- National Research Foundation (NRF) of Korea [2014-R1A1A2009097]
- National Research Council of Science & Technology (NST), Republic of Korea [KIER2-1] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Cu2ZnSn(SxSe1 (x))(4) (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu-Zn-Sn-S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (112) peak is systematically shifted to lower 2 theta values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40-1.08 eV by varying the Se vaporization temperature. (C) 2015 Elsevier B.V. All rights reserved.
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