Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 622, Issue -, Pages 719-724Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.08.179
Keywords
p-Type conductivity; BeZnO:N; Raman spectroscopy; ZnO
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Funding
- National Key Basic Research Program of China [2011CB302000]
- National Natural Science Foundation of China [51232009, 51202299]
- Fundamental Research Funds for the Central Universities [11lgpy16]
- Doctor Candidate Innovation Talents Training Funds Projects (Sun Yat-sen University)
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The low solubility of nitrogen in ZnO challenges the growth conditions for preparing p-type ZnO:N films. In this work, the effects of Be incorporation on the nitrogen doping ZnO are studied. The doping window for nitrogen mono-doping ZnO is very narrow. The nitrogen doping concentration in the ZnO:N is low, and greatly depends on the O/N ratio, Zn/O ratio and growth temperature parameters. However, the window for nitrogen doping can be substantially widened in the Be-N codoping ZnO process. The enhanced nitrogen doping level in the BeZnO:N films is fundamentally related to the strong Be-N bonds. Finally, p-type single-crystal hexagonal BeZnO:N films with more uniformly distributed nitrogen are obtained. (C) 2014 Elsevier B.V. All rights reserved.
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