4.7 Article

Preparation and photocatalytic activity of MgxZn1-xO thin films on silicon substrate through sol-gel process

Journal

APPLIED SURFACE SCIENCE
Volume 305, Issue -, Pages 753-759

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2014.03.192

Keywords

MgxZn1-xO thin films; Fourier transform infrared spectrum; Photoluminescence spectrum; Photocatalytic activity

Funding

  1. State Key Program for Basic Research of China [2013CB632705]
  2. National Natural Science Foundation of China [11334008, 61290301, 51072001, 51272001, 51002156, 51102072]
  3. China Postdoctoral Science Foundation [2012M520944]
  4. Anhui Provincial Natural Science Foundation [1208085MF99, 1208085QA16]
  5. Natural Science Foundation of Anhui Higher Education Institution of China [KJ12012Z336]
  6. Shanghai Postdoctoral Science Foundation [12R21416800]
  7. Distinguished Young Scholar of Anhui University [KIJQ1103]

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Magnesium doped zinc oxide (MgxZni3O) thin films were synthesized on silicon substrate through sol-gel process. Mg0,15Z110,85 0 thin films were annealed at 500-800 C and ZnO, Mg0.1 ZI10,9 0, Mg0,05Z110,950 thin films were annealed at 600 C for 60 min, respectively. The results show that all the samples are of a hexagonal wurtzite structure of ZnO. The surface morphology is strongly dependent on mean grain size and surface fluctuation. Fourier transform infrared spectra reveal that the vibration peak at 420 cm-1 is of the intrinsic lattice absorption of ZnO. The peak at 1083 cm -1 belongs to Si O Si asymmetric stretching vibration. Photoluminescence spectra show that the ultraviolet emission (365-400 nm) and the broad visible emission (469-569 nm) are observed. In particular, Mg0.05Zno.950 thin film annealed at 600 C exhibits the highest photocatalytic activity, degrading MO by almost 85.8% after 180 min illumination. The photocatalytic activity of the thin film is a synergistic effect defined by grain size, roughness factor, oxygen defects and amorphous MgO. (C) 2014 Elsevier B.V. All rights reserved.

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