Journal
APPLIED SURFACE SCIENCE
Volume 270, Issue -, Pages 718-721Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.01.134
Keywords
Bandgap; Sputter; Ambient; Photoelectrochemical; ZnO; GaN
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Funding
- U.S. Department of Energy [DE-AC36-08GO28308]
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Mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with significantly reduced bandgaps were synthesized by using zinc oxide and gallium nitride target at 100 degrees C followed by post-deposition annealing at 500 degrees C in ammonia for 4 h. All the films were synthesized by RF magnetron sputtering on Fluorine-doped tin oxide-coated glass. We found that mixed zinc oxide and gallium nitride (ZnO:GaN) thin films exhibited significantly reduced bandgap, as a result showed improved PEC response, compared to ZnO thin film. Furthermore, mixed zinc oxide and gallium nitride (ZnO:GaN) thin films with various bandgaps were realized by varying the O-2 mass flow rate in mixed O-2 and N-2 chamber ambient. (c) 2013 Elsevier B. V. All rights reserved.
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