Journal
APPLIED SURFACE SCIENCE
Volume 285, Issue -, Pages 545-551Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2013.08.090
Keywords
Boron; Carbide; XPS; Valence band offset; Amorphous
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In order to understand the fundamental charge transport in a-B:H and a-BX:H (X= C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (1 0 0) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B4-5C:H on (1 0 0) Si, relatively small valence band offsets of 0.2 +/- 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 +/- 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1-2 eV) were observed for interfaces with Si and Cu. (C) 2013 Elsevier B.V. All rights reserved.
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