Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Published 2012 View Full Article

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Title
Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 258, Issue 21, Pages 8366-8370
Publisher
Elsevier BV
Online
2012-02-10
DOI
10.1016/j.apsusc.2012.01.115

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