4.7 Article

An alternative approach for femtosecond laser induced black silicon in ambient air

Journal

APPLIED SURFACE SCIENCE
Volume 261, Issue -, Pages 722-726

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2012.08.087

Keywords

Black silicon; Femtosecond laser; Selectively etching; Absorption; Ambient air

Funding

  1. National Science Foundation of China [91123028, 61235003, 11204236]
  2. National Basic Research Program of China (973 Program) [2012CB921804]

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An alternative approach for femtosecond laser induced black silicon in ambient air is proposed, in which, black silicon is fabricated on a tellurium coated silicon substrate via femtosecond laser irradiation in ambient air, and selectively etching with hydrofluoric acid is employed to remove the incorporated oxygen. Results of energy dispersive X-ray spectroscopy analysis and absorption measurement show that oxygen is effectively eliminated via etching, and the optical absorption of the black silicon is enhanced. (C) 2012 Elsevier B. V. All rights reserved.

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