Journal
APPLIED SURFACE SCIENCE
Volume 257, Issue 15, Pages 6919-6922Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2011.03.031
Keywords
AZO nanorods; Sol-gel method; Heating rate; Electrical property
Categories
Funding
- Chinese Ministry of Education [309027]
- National Science Fund for Distinguished Young Scholars [50925103]
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Al-doped ZnO (AZO) films are prepared by sol-gel method with a proper annealing procedure. For the first time, we find that the heating rate which is normally neglected during the post annealing process plays a significant role in improving AZO properties. The AZO film with nanorod structure is obtained by using a rapid heating rate. The AZO nanorods can provide a faster conduction pathway for charge transport due to the high crystal quality and thus enhance the conductivity of the film significantly. After hydrogen treatment, the AZO nanorod film exhibits a minimum resistivity of 1.4x10(-3) Omega cm. This approach to the preparation of AZO nanorods by a simple rapid annealing process may be helpful for the development of sol-gel-derived TCO films. (C) 2011 Elsevier B. V. All rights reserved.
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