Origin of HfO2/GaAs interface states and interface passivation: A first principles study

Published 2010 View Full Article

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Title
Origin of HfO2/GaAs interface states and interface passivation: A first principles study
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 256, Issue 22, Pages 6569-6573
Publisher
Elsevier BV
Online
2010-04-22
DOI
10.1016/j.apsusc.2010.04.048

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